BTS115A |
RFQ for BTS115A Required Field |
 |
| Technical/Catalog Information | BTS115A |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 50V |
| Current - Continuous Drain (Id) @ 25° C | 15.5A |
| Rds On (Max) @ Id, Vgs | 120 mOhm @ 7.8A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 735pF @ 25V |
| Power - Max | 50W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | - |
| Package / Case | TO-220AB |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | BTS115A BTS115A BTS115AIN ND BTS115AINND BTS115AIN |
| Product | Manufacturers | Pack | D/C |
| BTS115A | - | 2004+ | 38000 |
Features |
| N channelLogic levelEnhancement modeTemperature sensor with thyristor characteristicThe drain pin is electrically shorted to the tab |
| Parameter | Symbol | Values | Unit |
| Drain-source voltage | VDS | 50 | V |
| Drain-gate voltage, RGS = 20 k | VDGR | 50 | |
| Gate-source voltage | VgS | ± 10 | |
| Continuous drain current, TC = 25 °C | ID | 15.5 | A |
| ISO drain current TC = 85 °C, VGS = 4.5 V, VDS = 0.5 V |
ID-ISO | 3.2 | |
| Pulsed drain current, TC = 25 °C | ID puls | 62 | |
| Short circuit current, Tj = 55 ... + 150 °C | ISC | 37 | |
| Short circuit dissipation, Tj = 55 ... + 150 °C | PSCmax | 550 | W |
| Power dissipation | Ptot | 50 | |
| Operating and storage temperature range | Tj, Tstg | 55 ... + 150 | °C |
| DIN humidity category, DIN 40 040 | E | ||
| IEC climatic category, DIN IEC 68-1 | 55/150/56 | ||
| Thermal resistance Chip-case Chip-ambient |
Rth JC Rth JA |
2.5 75 |
K/W |
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